11:15 - 12:15 |
On the properties of annealed ZnO and organozinc thin films by plasma enhanced-atomic layer deposition
Abstract: Atomic layer deposition (ALD) is a self-limiting vapor-phase technique that allows the deposition of (ultra-)thin films with excellent conformality and sub-nm thickness control. With this method, a variety of inorganic thin films can be produced, ranging from oxides to nitrides and sulfides. By adopting a plasma discharge as one of the reactant in the process (so called plasma enhanced-ALD) the same materials can be achieved at lower temperature (down to room temperature) than classical ALD, thanks to the highly reactive species present in the plasma phase.
Post-deposition treatments are often adopted in order to further tune the material properties and, in some cases, to enhance the quality of the thin films. In this contribution, the effect and materials properties of post-process annealing of PE-ALD zinc oxide (ZnO) are explored. Moreover, hybrid inorganic-organic organozinc compounds were synthesized by PE-ALD. Thin (20-30 nm) ZnO and organozinc layers were annealed at different temperatures in the range 100-600 °C, and their optochemical and structural properties were investigated in-situ by spectroscopic ellipsometry (SE) and X-ray based techniques. The possibility to tune refractive index, crystallinity, and porosity is shown.