Field of Expertise: Advanced Material Science | |
Investigation of performance limiting point defects in SiC MOSFETs using electrically detected magnetic resonance Defects at semiconductor-oxide interfaces in the channel of a transistor can act as trapping or scattering centers thereby limiting the carrier lifetime, degrading the carrier mobility, shifting the threshold voltage and causing parasitic device leakage currents. For certain high power applications, wide band gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are of particular interest due to their superior intrinsic material properties (i.e. high breakdown voltage, high thermal conductivity, better switching performance…). Devices based on wide band gap semiconductor materials exhibit considerably higher defect densities than devices based on silicon technologies. The key for developing competitive and reliable wide band gap devices is to minimize the number of atomic scale defects by optimizing the processing parameters. |