Field of Expertise: Advanced Material Science

In-situ thin film transistor fabrication: Electrical and surface analytical characterization
R. Lassnig, B. Striedinger, A. Fian, B. Stadlober and A. Winkler
Institute of Solid State Physics
15:20 - 17:30 Thursday 24 October 2013 Foyer Alte Technik

The underlying principles affecting performance and lifetime of organic semiconducting devices are still not fully understood. We present analysis on the formation and stability of Pentacene layers in organic field effect transistors (OFET) through a unique combination of organic layer deposition and in-situ electrical and surface analytical characterization during and subsequent to deposition, all performed under ultra-high vacuum conditions. Layer growth and performance parameters, such as layer thickness and device temperature were modified and evaluated. To reach conclusions about the layer growth mechanism and possible growth affecting contaminations, in-situ AES, TDS and ex-situ AFM were performed throughout the device fabrication.