Field of Expertise: Advanced Material Science

Novel Hydrosilane Precursors for Solution Based Silicon Deposition
Harald Stueger, Christoph Walkner, Andrea Temmel
Anorganische Chemie
15:20 - 17:30 Thursday 24 October 2013 Foyer Alte Technik

Solution-based deposition and processing techniques for silicon attracted considerable attention just recently because they allow significant reduction of processing costs in the manufacture of devices such as light emitting diodes, thin film transistors or solar cells as compared to standard vacuum-based (CVD) approaches.[1] Open chained and cyclic silicon hydrides of the composition Si_nH_2n+2 or Si_nH_2n(structures A, B, C) respectively, are potential precursors in this context and silicon layers have been deposited successfully from solutions containing hydrosilane oligomers obtained by photochemical or thermal decomposition of cyclopentasilane Si₅H₁₀.[2] Thiscontribution describessimilar applications of neopentasilane (H₃Si)₄Si, which is much easier accessible than Si₅H₁₀.[3] In particular novel approaches to functionalized higher silicon hydrides containing heteroelements such as C, Ge or B will be presented with the primary target to elaborate possible pathways to doped single source precursors for silicon film deposition.