Institute of Solid State Physics
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SS22 WS22 SS23 WS23 SS24 WS24 Guidelines for Master Students
Center to edge uniformity improvement during chemical mechanical polishing Chemial Mechanical Polishing (CMP) is a process used in microelectronics to give wafers a flat surface. The materials that are removed are often quite hard such as silicon, silicon-dioxide, tungsten, and TiN. The wafers are polished using a slurry containing chemicals to attack the wafers and abrasive particles. During this presentaion the CMP process will be explained und the challenges of achieving a minimum topography are discussed. The mechanisms of abrasion, the thermal distribution, the fluid mechanics of the slurry flow, and the chemical reactions that take place at the surface will be considered . This understanding will provide a good foundation in finding ways to improve performance metrics such as: material removal rate on different substrates, center to edge uniformity, wafer-to-wafer uniformity, defects on the surface, influence of the pad and head on the center to edge uniformity and the effects of a slurry reduction. |
