Institute of Solid State Physics


SS22WS22SS23WS23SS24WS24      Guidelines for Master Students

Dynamic and static degradation of pGaN HV devices
Dominik Wieland
11:15 - 12:15 Wednesday 22 January 2020 PH 01 150

Galium nitride transistor are a promising replacement for conventional silicon based transistors in power conversion applications, which makes them an interesting topic for industry and research.

The topic of the presentation will be an introduction on the concepts of the high voltage GaN transistors used throughout the related master thesis, which are the Gate Injection Transistor (GIT) and the Hybrid Drain Gate Injection Transistor. (HDGIT)

Furthermore, the presentation will feature an introduction to the dynamic degradation of these devices which will be discussed based on lifetime tests in application like conditions.