Institute of Solid State Physics

• 
  • TU Graz ■ home
  • TU4U
  • TUGRAZ■online
  • TUG Webmail
  • Teach Center
  • Cloud
  • TU Library
  • Bachelor's Programme Physics
  • Master's Programmes Physics
  • Master's Programmin Advanced Materials Science
  • Doctoral School of Physics
  • TU Graz Insider

Growth and Characterization of β-Ga2O3
Laurenz Geihofer
11:15 - 12:15 Wednesday 11 November 2020 PH01150

Video: https://bigmail.TUGraz.at/outgoing/geihofer_184746_8310/4439_de.html

Wide- and ultrawide bandgap semiconductors are an emerging class of materials with promising potential in various applications, most notably high-power electronics. One of these materials is gallium oxide, specifically its β-polymorph, which is stable at standard conditions. It has a bandgap of approximately 4.9 eV and is the most researched phase of gallium oxide. An advantage that this material has over some other ultrawide-bandgap semiconductors is its ready availability of bulk crystals (wafers), making homoepitaxy possible.

In this work, gallium oxide thin films are grown on sapphire substrates by means of hot-wall metal-organic chemical vapor deposition (MOCVD). Since research on this material has just recently started, the basic objective was to use the MOCVD reactor to grow gallium oxide for the first time and achieve film growth. Additionally, the influence of temperature in the growth chamber, which is one of the most important parameters, is studied. To analyse the samples, they were studied with atomic force microscopy, spectroscopic ellipsometry and X-ray diffractometry.