Institute of Solid State Physics
|
|
SS22 WS22 SS23 WS23 SS24 WS24 Guidelines for Master Students
Electrical characterization of charge accumulation/depletion in GaN-based HEMTs Video: https://bigmail.TUGraz.at/outgoing/boris_butej_134130_3212/2191_de.html Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs) are superior to conventional silicon (Si) based devices in terms of high power, high frequency and high temperature applications. For cost-competitiveness these devices are grown on Si substrates, which introduce a lot of defects such as dislocations or point defects in the buffer layers and therefore lead to a negative impact on the device performance. This talk will give an insight where and how charges accumulate/deplete in the GaN-based HEMT under different stress conditions. |
