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Plasma enhanced atomic layer deposition (PE-ALD) allows sub-monolayer thickness control and conformity, which are desired characteristics for the actual trend towards device miniaturization in microelectronics. Titanium nitride has interesting crystalline properties that can be tuned by the deposition conditions. Nevertheless, the deposition of nitrides is not always trivial, since contamination with oxygen is a major issue often leading to the formation of oxynitrides. This talk will address the process optimization aiming for homogenous layers of nitrides, which are at the same time crystalline.