Institute of Solid State Physics
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SS22 WS22 SS23 WS23 SS24 WS24 Guidelines for Master Students
Electro-optical Characterization of Point Defects in Si, SiC and GaN Devices Charge carriers flowing through the channel of a MOSFET can get trapped in the bulk or at the SiC/SiO$_2$ interface and affect the device performance. These trap levels have their origin in the different crystal structures of SiC and SiO$_2$ which lead to a lattice mismatch. If the energy of a defect is in the middle of the bandgap it acts as recombination center and if they are far from the band edges and from the middle they are called traps. Even though these defects determine many properties of the semiconductor, their concentrations are quite low and it can be difficult to determine which defects are present in which concentrations. The characterization of these defects is crucial knowledge for improving the device performance. Therefore, the measurement methods Deep Level Transient Spectroscopy (DLTS) and Deep Level Optical Spectroscopy (DLOS) were performed over a wide temperature span, ranging from room temperature to cryogenic temperature. |
