Electrothermal simulations of GaN diodes
Sandra Fischer
MCL Leoben
https://tugraz.webex.com/tugraz/j.php?MTID=m2790c3d2a9a49c31369978e2a76de31c
11:15 - 12:15 Wednesday 26 June 2024 In recent years, wide-band-gap (WBG) materials attracted significant interest for high-power applications due to their reduced power conversion losses and high on-resistance. Particularly gallium nitride (GaN), a prominent WBG material, is considered a potential alternative to the longstanding silicon for high-power diodes due its thermal stability during operation.
For the design of new high-power WBG devices, it is essential to understand the thermal behavior. This presentation shows, how thermal and electrothermal simulations are combined with experiments to clarify the thermal management in various GaN-based device structures. Experiments that complement simulations are (i) scanning thermal microscopy to map locally resolved temperature patterns, and (ii) time-domain thermoreflectance to assess the intrinsic thermal properties of the materials.
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Institute of Solid State Physics
