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SS23 WS23 SS24 WS24 SS25 Guidelines for Master Students
High Electron Mobility Transistors In High-Electron-Mobility Transistors (HEMTs), electrons are trapped at an interface between two semiconductors. This is achieved by using semiconductors with different band gaps on the two sides of the interface and doping these semiconductors appropriately. When electrons are trapped at an interface they form a 2-dimensional Electron Gas (2DEG). The restriction of the electron motion to two dimensions reduces scattering and gives the devices a high mobility. Sometimes ferroelectric semiconductors such as GaN are used to make HEMTs. In this case, the ferroelectric polarization contributes to the formation of the 2DEG. |