Institute of Solid State Physics


SS23WS23SS24WS24SS25      Guidelines for Master Students

High Electron Mobility Transistors
Peter Hadley
Institute of Solid State Physics
https://tugraz.webex.com/tugraz/j.php?MTID=m8daf09f15e605c5af50c8e8450aeef31
11:15 - 12:15 Wednesday 18 December 2024 

In High-Electron-Mobility Transistors (HEMTs), electrons are trapped at an interface between two semiconductors. This is achieved by using semiconductors with different band gaps on the two sides of the interface and doping these semiconductors appropriately. When electrons are trapped at an interface they form a 2-dimensional Electron Gas (2DEG). The restriction of the electron motion to two dimensions reduces scattering and gives the devices a high mobility. Sometimes ferroelectric semiconductors such as GaN are used to make HEMTs. In this case, the ferroelectric polarization contributes to the formation of the 2DEG.