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 Karl Franzens University Graz

Graz University of Technology 

Solution processed organic field-effect transistors for large area and low cost applications
Dr. Marta Mas-Torrent
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)
17:15 - 18:15 Tuesday 28 March 2017 TUG P2

Organic-based devices are currently attracting great attention for applications where low-cost, large area coverage and flexibility are required. The best performing electronic devices to date are those comprising single crystals of organic semiconductors, although they are neither suitable for large-area applications nor compatible with fast high-throughput industrial-scale fabrication. Thus, engineering processing techniques that could give rise to highly crystalline and homogenous semiconducting films potentially resulting in reproducibly high mobility devices is a current challenge. We report here the bar-assisted solution shearing (BAMS) of organic semiconductor blends based on small semiconducting molecules and the insulating polymer polystyrene and their application in organic field-effect transistors. This technique results in highly crystalline thin films that showed high performance and ideal device characteristics. Further, we investigated the influence of the deposition parameters and solution formulation on the thin film morphology and polymorphism, which in turn, has a crucial impact on the device performance.