Institute of Solid State Physics
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SS22 WS22 SS23 WS23 SS24 WS24 Guidelines for Master Students
Electrical Characterization of CVD Oxide Thin Films Oxides and nitrides are often used as electrically insulating layers in semiconductor devices. Trapped charges in these dielectric films can affect device performance. In this project, dielectric films (Silicon Oxide, Silicon Nitride, Silicon Oxynitride) were deposited by Chemical Vapor Deposition (CVD) or varieties of CVD such as Plasma Enhanced CVD and High Density Plasma CVD. The distribution of trapped charge was investigated with a state-of-the-art contact-less electrical Charge-Voltage (QV) method using a tool produced by Semiconductor Diagnostics Inc. The thickness, refractive index, stress and a stoichiometric analysis of the thin-films were also determined. The influence of various subsequent thermal treatments were studied. For the sake of completeness, some experiments were additionally measured with a conventional Capacitance-Voltage (CV) method to illustrate the difference in the measurement techniques. |
