Institute of Solid State Physics
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SS22 WS22 SS23 WS23 SS24 WS24 Guidelines for Master Students
Influence of the On-Chip Signal-Metallization Routing Topology on Self-Heating in Integrated Power Technologies Today’s state-of-the-art integrated bipolar-CMOS-DMOS (BCD) power technologies employ highly optimized DMOS transistors with extremely low area-specific on-resistance. This ensures high current capability at minimum area requirements, however, this comes at the expense of increased thermal impedance leading to increased self-heating of the device. Elevated operating temperatures deteriorate device performance; can lead to decreased lifetime and even catastrophic failure due to thermal runaway. The main factors influencing self-heating during switching events in the millisecond and sub-millisecond regime are the thermal conductivity and thermal capacity of the on-chip metallization. |
