Institute of Solid State Physics
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SS22 WS22 SS23 WS23 SS24 WS24 Guidelines for Master Students
Deposition and characterization of Al(Ti)N thin films deposited via plasma enhanced atomic layer deposition The objective of this master thesis is to deposit thin films containing AlTiN on a surface via plasma enhanced atomic layer deposition (PEALD). Atomic layer deposition (ALD) is a self-limiting form of chemical vapor deposition allowing for highly uniform atomic layers and a thickness control within the sub-nanometer-regime. Plasma assisted ALD, often called PEALD is an evolution from the conventional ALD process, in which the reaction between the precursor and the co-reactant is thermally induced. For the self-limiting process it is from great importance that the used precursor and co-reactant(s) react only with each other but not with themselves. PEALD made its breakthrough in the semiconductor industry in processes for high-?-dielectrics and allows to coat highly conformal thin films on complex structures. The goal is to make use of the PEALD technique in order to deposit uniform AlTiN layers with promising material properties for thermoelectric devices such as NTCs (negative temperature coefficients) and be able to tune its properties via composition control. Characterization of the thin films is done with spectroscopic ellipsometry, x-ray diffraction and FTIR. |
