Growing graphene epitaxially on Ge(110) with chemical vapor deposition
Elena Unterleutner
https://tugraz.webex.com/tugraz/j.php?MTID=mdcdb6c1cabf911c39e820cae6191f94e
11:15 - 12:15 Wednesday 21 June 2023 Ge(110) can be used to grow wafer-scale high-quality graphene epitaxially with chemical vapor deposition (CVD). For industrial applications a reduction of the process temperatures is necessary.
In this work an adapted form of CVD was used to deposit graphene on Ge(110) substrates after preliminary experiments with plasma enhanced CVD. The influence of different process parameters, including the process temperature, was investigated. The quality of the obtained graphene films was examined ex-situ with Raman spectroscopy and scanning electron microscopy measurements.
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Institute of Solid State Physics
