Institute of Solid State Physics

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Influence of platinum-hydrogen complexes on silicon p+/n-diode characteristics
Jennifer Prohinig
11:15 - 12:15 Wednesday 03 October 2018 PH01150

The introduction of platinum in silicon diodes is a widely spread technique to decrease the minority carrier lifetime and therefore influence the device switching behavior. If such samples are exposed to hydrogen during some processing step, the formation of Pt-H complexes may occur. In this talk the influence of Pt and Pt-H related defects on Si diode characteristics is discussed.
Combining characterization techniques such as current voltage (IV) and capacitance voltage (CV) measurements with deep-level transient spectroscopy (DLTS) for defect identification it could be shown, that mid-bandgap traps such as Pt-H complexes increase the leakage current in reverse and the non-ideality factor in forward operation.