Institute of Solid State Physics
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SS22 WS22 SS23 WS23 SS24 WS24 Guidelines for Master Students
Self-limited: ZnO thin films from dense to porous texture ZnO is a II-VI wide direct band gap semiconductor (3.37 eV) and possesses a unique combination of properties, ranging from piezo-electricity, easy processability, and low temperature crystallization. The delivery of ZnO as thin film enabled its use also in cutting-edge devices (such as buffer layers in perovskite solar cells and ultra-sensitive biosensors), and, in turn, increasing efforts have been put forth for the investigation of novel methods to produce high quality ZnO thin films, and to gain control of its nano-structure and intrinsic properties. In this contribution, the last two years of research at the IF on ZnO thin films will be presented. Adopting different self-limiting vapor-phase techniques (namely, plasma enhanced atomic layer deposition, PE-ALD, and the newly arrived molecular layer deposition, MLD), ZnO thin films were delivered with different nano-structure, ranging from a highly dense to porous texture. An overview of the deposition methods and the approaches to engineer the ZnO growth and nano-structure will be given. |
