Institute of Solid State Physics


SS22WS22SS23WS23SS24WS24      Guidelines for Master Students

Plasma Damage Monitoring
Pirker Caroline
11:15 - 12:15 Wednesday 05 June 2019 SE PH01150

In semiconductor industry plasma assisted processes are widely used to avoid high temperature, undesired reactants, or to alter layer properties. For example, using plasma for etching reveals a different characteristic compared to wet etch processes. Similarly this technique is used for the deposition of silicon oxide layers at lower temperatures compared to furnace processes.
Despite of these advantages, the use of plasma in deposition processes often leads to unwanted charges in the formed layer. As a result, this so called plasma damage negatively affects the insolating properties of the SiO2 film, leading to a degraded electronic performance of the processed chip.
This presentation focusses on plasma damage monitoring in chemical vapor deposition processes and its measurement. Special emphasis is led on the formation and the influencing parameters in order to reduce or even avoid these unwanted charges.