Characterization of carbon-containing chamber-wall coatings in industrial plasma etch chambers
Christopher Mangge
11:15 - 12:15 Wednesday 13 January 2021 PH01150 Video: https://bigmail.TUGraz.at/outgoing/mangge_210337_1184/4771_en.html Plasma deposition systems and plasma etching systems used in microelectronics have largely the same components. The difference between the two is how the plasma is tuned at the substrate surface. In a plasma etcher, the plasma is tuned to remove material from the substrate. During this process, the conditions at the sidewalls of the chamber can be such that deposition takes
place. These depositions change the etching environment and affect the reproducibility of the etching process.
Especially in the plasma etching of (Al)GaN materials there is little to no literature on the amount, chemical nature and removability of these chamber wall layers. Aim of this thesis is to study the etching processes of GaN with respect to their chamber wall deposition behavior for chlorine-based plasmas. For this purpose, analytical characterization methods such as electron microscopy and auger electron spectroscopy will be performed on substrates placed on the reactor wall. In collaboration with the TUGraz, further characterization of the samples is done by spectroscopic ellipsometry.
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Institute of Solid State Physics
