Institute of Solid State Physics
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SS22 WS22 SS23 WS23 SS24 WS24 Guidelines for Master Students
Evaluation of Random Telegraph Noise (RTN) in MOSFET devices A brief overview of low frequency noise in MOSFETs, especially n-channel MOSFET devices, is presented. The main physical features of noise will be discussed, keeping the focus on Random Telegraph Noise (RTN). Due to the downsizing of such devices, RTN started to get a huge influence in this matter. Furthermore, methods of analyzing individual signals obtaining two level RTN, such as extracting the capture and emission time of traps in the oxide layer, will be introduced and evaluated. Lastly, there will be an outlook of further investigation and statistics that concerns the industry. |
