Institute of Solid State Physics
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SS23 WS23 SS24 WS24 SS25 Guidelines for Master Students
Plasma treatment of GaN HEMT device surfaces Field-effect transistors based on GaN/AlGaN-heterostructures, so-called high electron-mobility transistors (HEMTs), are a promising technology for high- power and high-frequency applications. Especially, in the field of sustainable energies and electric vehicles, a wide range of possible usages exists. Nevertheless, GaN is a rather challenging material in processing, because of its brittle and reactive properties. Part of the manufacturing process are plasma etching steps, which allow precise structuring. Those can lead to plasma-induced damages of the processed surfaces, which can have crucial impact on device operation and reliability. Possible improvements can be achieved by after-etching plasma treatments with ammonia and/or forming gas, which are examined based on electrical measurements during the experiments. |
